PART |
Description |
Maker |
GA250TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT HALF-BRIDGE IGBT DOUBLE INT-A-PAK
|
IRF[International Rectifier]
|
DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
CM50DY12E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 50A条一(c
|
Mitsubishi Electric, Corp.
|
CM50DY28 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 1.4KV五(巴西)国际消费电子展| 50A条一(c
|
Mitsubishi Electric, Corp.
|
CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一(c
|
Toshiba, Corp.
|
SIM150D12SV3 |
“HALF-BRIDGE IGBT Module “HALF-BRIDGE” IGBT Module
|
SemiWell Semiconductor
|
DIM100PHM33-F000 DIM100PHM33-F000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
DIM200MHS17-A000 |
Half Bridge IGBT Module
|
http:// DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd.
|
BSM100GB120DN2 100B12N2 C67076-A2107-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
BSM100GB120DN2K 100B12K2 C67070-A2107-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
GA200HS60S |
600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package 600V的直千赫的廉政(标准)半桥IGBT à - Pak封装 HALF-BRIDGE IGBT INT-A-PAK
|
Ecliptek, Corp. IRF[International Rectifier]
|
40MT120UH 40MT120UHT |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a MTP package HALF-BRIDGE IGBT MTP UltraFast NPT IGBT
|
IRF[International Rectifier]
|